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熔石英后表面坑点型划痕对光场调制的近场模拟
引用本文:章春来,王治国,向霞,刘春明,李莉,袁晓东,贺少勃,祖小涛.熔石英后表面坑点型划痕对光场调制的近场模拟[J].物理学报,2012,61(11):114210-114210.
作者姓名:章春来  王治国  向霞  刘春明  李莉  袁晓东  贺少勃  祖小涛
作者单位:1. 电子科技大学物理电子学院,成都,610054
2. 电子科技大学物理电子学院,成都610054 中国工程物理研究院激光聚变研究中心,绵阳621900
3. 中国工程物理研究院激光聚变研究中心,绵阳,621900
基金项目:国家自然科学基金青年科学基金 (批准号: 10904008)、国家自然科学基金委员会-中国工程物理研究院联合基金 (批准号: 11076008)和 中央高等学校基本科研基金 (批准号: ZYGX2009X007, ZYGX2010J045, ZYGX2011J043) 资助的课题.
摘    要:建立了坑点型划痕的旋转抛物面模型, 用三维时域有限差分方法研究了熔石英后表面坑点型划痕随深度、 宽度、 间距以及酸蚀量变化对波长λ =355 nm入射激光的调制.研究表明, 这类划痕调制最强区位于相邻两坑点的连接区, 且越靠近表面调制越强.当其宽深比为2.0---3.5、 坑点间距约为坑点宽度的1/2时, 可获得最大光场调制, 最大光强增强因子(LIEF)为11.53; 当坑点间距大于坑点宽度时, 其调制大为减弱, 相当于单坑的场调制.对宽为60δ (δ =λ/12), 深和间距均为30δ的坑点型划痕进行刻蚀模拟, 刻蚀过程中最大LIEF为11.0, 当间距小于300 nm时, 相邻坑点由于衍射形成场贯通.

关 键 词:熔石英  坑点型划痕  激光辐照  时域有限差分
收稿时间:2011-08-04

Simulation of field intensification induced by pit-shaped crack on fused silica rear-surface
Zhang Chun-Lai,Wang Zhi-Guo,Xiang Xia,Liu Chun-Ming,Li Li,Yuan Xiao-Dong,He Shao-Bo,Zu Xiao-Tao.Simulation of field intensification induced by pit-shaped crack on fused silica rear-surface[J].Acta Physica Sinica,2012,61(11):114210-114210.
Authors:Zhang Chun-Lai  Wang Zhi-Guo  Xiang Xia  Liu Chun-Ming  Li Li  Yuan Xiao-Dong  He Shao-Bo  Zu Xiao-Tao
Affiliation:1. School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;2. Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
Abstract:Rotating paraboloid model is establishd,and three-dimensional finite-difference time-domain method is used to simulate pitshaped cracks on fused silica rear-surface.The light intensification with its depth,width,gap distance and etch value are investigated under 355 nm laser incident.Results show that the strongest modulation is located at the connection area between pit and pit,and the modulation become strong with approaching to the surface.The maximum light intensity enhancement factor(LIEF) is 11.53 when the breadth depth ratio ranges from 2.0 to 3.5 and gap distance close to 1/2 width.As gap distance greater than the width,the modulation reduces greatly,which is equal to a single pit.For 60δ-width,30δ-depth and 30δ-gap distance cracks,the maximum LIEF is 11.0 during the acid etching.As the gap distance is less than 300 nm,the diffraction of the light field makes the neighbor pits connective.
Keywords:fused silica  pit-shaped crack  laser irradiation  finite-difference time-domain
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