Characteristics of pentacene organic thin film transistor with top gate and bottom contact |
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| Authors: | Yuan Guang-Cai Xu Zheng Zhao Su-Ling Zhang Fu-Jun Jiang Wei-Wei Song Dan-Dan Zhu Hai-N Li Shao-Yan Huang Jin-Ying Huang Hao and Xu Xu-Rong |
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| Affiliation: | Institute of Optoelectronic Technology, Beijing Jiaotong
University,
Beijing 100044, China;
Key Laboratory of Luminescence and Optical Information (Beijing
Jiaotong University), Ministry of
Education,
Beijing 100044, China |
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| Abstract: | High performance pentacene organic thin film transistors (OTFT) were
designed and fabricated using SiO2 deposited by electron beam
evaporation as gate dielectric material. Pentacene thin films were
prepared on glass substrate with S--D electrode pattern made from ITO
by means of thermal evaporation through self-organized process. The
threshold voltage VTH was --2.75± 0.1V in 0---50V
range, and that subthreshold slopes were 0.42± 0.05V/dec. The
field-effect mobility (μEF) of OTFT device increased with
the increase of VDS, but the μEF of OTFT device
increased and then decreased with increased VGS when VDS was kept constant. When VDS was --50V, on/off current
ratio was 0.48× 105 and subthreshold slope was 0.44V/dec.
The μEF was 1.10cm2/(V.s), threshold voltage
was --2.71V for the OTFT device. |
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| Keywords: | thin-film transistor pentacene threshold voltage subthreshold slope |
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