| 物理气相传输法生长大尺寸AlN晶体及其性质表征 |
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| 引用本文： | 董志远,赵有文,魏学成,李晋闽. 物理气相传输法生长大尺寸AlN晶体及其性质表征[J]. 半导体学报, 2007, 28(2): 204-208 |
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| 作者姓名： | 董志远 赵有文 魏学成 李晋闽 |
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| 作者单位： | 中国科学院半导体研究所,北京,100083 |
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| 摘 要： | 利用物理气相传输法生长了直径40～50 mm、厚约8～10 mm的AlN多晶锭,最大晶粒尺寸为5 mm.用喇曼散射和阴极荧光谱研究了AlN晶体的结晶质量、缺陷和结构特性.分析了不同温度下AlN晶体的导电特性,并确定在AlN晶体中存在一个激活能约为0.98eV的深能级缺陷.结合这些结果分析了PVT法生长条件对AlN体单晶生长和晶体质量的影响.
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| 关 键 词： | AlN 物理气相传输法 缺陷 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2006-10-14 |
Physical Vapor Transport Growth and Characterization of Large Bulk AlN Crystal |
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| Dong Zhiyuan, Zhao Youwen, Wei Xuecheng, Li Jinmin. Physical Vapor Transport Growth and Characterization of Large Bulk AlN Crystal[J]. Journal of Semiconductors, 2007, In Press. Dong Z Y, Zhao Y W, Wei X C, Li J M. Physical Vapor Transport Growth and Characterization of Large Bulk AlN Crystal[J]. Chin. J. Semicond., 2007, 28(2): 204.Export: BibTex EndNote |
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| Authors: | Dong Zhiyuan Zhao Youwen Wei Xuecheng Li Jinmin |
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| Affiliation: | Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | AlN polycrystalline boules with a diameter of 40～50mm, a thickness of 8～10mm,and a grain size of up to 5mm have been grown with physical vapor transport technology.The crystalline quality,defects,and structure of these crystals have been investigated by using Raman scattering and cathodoluminescence spectroscopy.The electrical conductivity of the AlN crystal has been measured from room temperature to 800℃,and a deep level defect with activation energy of 0.98eV is identified.The influence of growth conditions on AlN crystalline quality is also discussed. |
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| Keywords: | AlN physical vapor transport defects |
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