| n型SiC的Ni基欧姆接触中C空位作用的实验证明 |
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| 引用本文： | 郭辉,张义门,张玉明.n型SiC的Ni基欧姆接触中C空位作用的实验证明[J].半导体学报,2007,28(1). |
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| 作者姓名： | 郭辉 张义门 张玉明 |
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| 作者单位： | 西安电子科技大学微电子学院,教育部宽禁带半导体材料重点实验室,西安,710071 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，国家重点基础研究发展计划军用项目，国家自然科学基金，国家重点基础研究发展计划(973计划)，National Defense Basic Research Program of China |
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| 摘 要： | 通过在Si面p型4H-SiC外延层上使用P+离子注入来形成n阱.Ti和Ni依次淀积在有源区的表面,金属化退火后的XRD分析结果表明Ni2Si是主要的合金相.XEDS的结果表明在Ni2Si/SiC界面处存在一层无定型C.去除Ni2Si合金相与无定型C之后重新淀积金属,不经退火即可形成欧姆接触.同时,注入层的方块电阻Rsh从975下降到438Ω/□.结果表明,合金化退火过程中形成了起施主作用的C空位(VC).C空位提高了有效载流子浓度并对最终形成欧姆接触起到了重要作用.
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| 关 键 词： | Ni 欧姆接触 SiC C空位 P+离子注入 |
Evidence of the Role of Carbon Vacancies in Nickel-Based Ohmic Contacts to n-Type Silicon Carbide |
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| Guo Hui,Zhang Yimen,Zhang Yuming.Evidence of the Role of Carbon Vacancies in Nickel-Based Ohmic Contacts to n-Type Silicon Carbide[J].Chinese Journal of Semiconductors,2007,28(1). |
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| Authors: | Guo Hui Zhang Yimen Zhang Yuming |
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| Abstract: | N-wells are created by P+ ion implantation into Si-faced p-type 4H-SiC epilayer.Ti and Ni are deposited in sequence on the surface of the active regions.Ni2Si is identified as the dominant phase by X-ray diffraction (XRD) analysis after metallization annealing.An amorphous C film at the Ni2Si/SiC interface is confirmed by an X-ray energy-dispersive spectrometer (XEDS).The Ni2Si and amorphous C film are etched away selectively,followed by deposition of new metal films without annealing.Measurement of the current-voltage characteristics shows that the contacts are still ohmic after the Ni2Si and amorphous C film are replaced by new metal films.The sheet resistance Rsh of the implanted layers decreases from 975 to 438Ω/□,because carbon vacancies (VC) appeared during annealing,which act as donors for electrons in SiC. |
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| Keywords: | Ni ohmic contact silicon carbide carbon vacancies P+ ion implantation |
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