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一种可编程电压基准源设计与实现
引用本文:张科,郭健民,孔明,李文宏. 一种可编程电压基准源设计与实现[J]. 半导体学报, 2007, 28(1): 36-41
作者姓名:张科  郭健民  孔明  李文宏
作者单位:复旦大学专用集成电路与系统国家重点实验室,上海,201203
摘    要:提出了一种新的基于改进的电流模式带隙基准源的可编程基准源的设计与实现方法.电路采用Chartered 0.35μm 工艺仿真并流片.测试结果表明,温度变化范围为0~100℃,温度系数为±36.3ppm/℃(VID=11110).电源电压变化范围为2.7~5V,其相对变化值为5mV.当VID0频率为125kHz时,瞬态响应最大毛刺幅度约为20mV.5位VID码不同的输入状态,输出基准电压从1.1变到1.85V,变化步长为25mV.

关 键 词:电压调整器  电流模式的带隙基准源  温度系数  电源抑制比  可编程电压基准源
收稿时间:2015-08-18
修稿时间:2006-08-17

IC Implementation of a Programmable CMOS Voltage Reference
Zhang Ke, Guo Jianmin, Kong Ming, Li Wenhong. IC Implementation of a Programmable CMOS Voltage Reference[J]. Journal of Semiconductors, 2007, In Press. Zhang K, Guo J M, Kong M, Li W H. IC Implementation of a Programmable CMOS Voltage Reference[J]. Chin. J. Semicond., 2007, 28(1): 36.Export: BibTex EndNote
Authors:Zhang Ke  Guo Jianmin  Kong Ming  Li Wenhong
Affiliation:State Key Laboratory of ASIC & System,Fudan University,Shanghai 201203,China;State Key Laboratory of ASIC & System,Fudan University,Shanghai 201203,China;State Key Laboratory of ASIC & System,Fudan University,Shanghai 201203,China;State Key Laboratory of ASIC & System,Fudan University,Shanghai 201203,China
Abstract:A new approach for the design and implementation of a programmable voltage reference based on an improved current mode bandgap voltage reference is presented.The circuit is simulated and fabricated with Chartered 0.35μm mixed-signal technology.Measurements demonstrate that the temperature coefficient is ±36.3ppm/℃ from 0 to 100℃ when the VID inputs are 11110.As the supply voltage is varied from 2.7 to 5V,the voltage reference varies by about 5mV.The maximum glitch of the transient response is about 20mV at 125kHz.Depending on the state of the five VID inputs,an output voltage between 1.1 and 1.85V is programmed in increments of 25mV.
Keywords:voltage regulation modules  current mode bandgap voltage reference  temperature coefficient  power supply rejection ratio  programmable voltage reference
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