PbTiO3–PbO–SiO2 Glass-Ceramic Thin Film by a Sol–Gel Process |
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Authors: | Kunio Saegusa |
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Affiliation: | Tsukuba Research Laboratory, Sumitomo Chemical Co. Ltd., Tsukuba, Ibaraki 300-32, Japan |
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Abstract: | PbTiO3(PT)-PbO-SiO2 glass-ceramic thin films were pro-duced by a sol-gel process. The crystallization of PT oc-curred at ~700°C and was higher than that in PT-PbO-B2 O3 sol-gel glass-ceramics. A pinhole-free thin film was obtained by a rapid thermal annealing process when the designed glass-forming phase content in the thin film was >24 vol%. The measured dielectric constants of the films fairly agreed with the predicted values, based on a parallel mixing model. The dielectric constant was 219 and the di-electric loss was 0.04 in the 0.6PT-0.4(PbO-SiO2) film that was fired at 700°C. |
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