一种新型双通道MOS开关栅压自举电路

设计了一种新的低压、高速、高线性度的双通道MOS开关栅压自举电路，该电路采用同时自举NMOS和PMOS的并行结构，不但降低了MOS开关的导通电阻值，同时在输入信号的全摆幅范围内实现了常数的导通电阻；考虑了器件可靠性要求且与标准的CMOS工艺技术兼容．采用0.13μm CMOS工艺和1.2V工作电压的仿真实验表明，提出开关的导通电阻在全摆幅输入信号范围内的变化量小于4.3%；在采样频率为100MHz，输入峰峰值为1V，输入频率为100MHz时，提出开关的总谐波失真达到-88.33dB，较之传统的NMOS自举开关以及标准的CMOS传输门开关，分别提高了约-14.8dB和-29dB．设计的开关可应用于低压、高速高精度的开关电容电路中．

Novel dual-channel MOS bootstrapped switch circuit

A novel low-voltage, high-speed and high-linear dual-channel MOS bootstrapped switch is proposed. This proposed switch utilizes the bootstrapping technique of both NMOS and PMOS simultaneously, thus resulting in small-variation low-value on-resistance over the entire input signal range. The switch considers reliability constrains and is suitable for standard CMOS technology. Based on the 0.13μm CMOS technology and 1.2V power supply, simulation results show that the switch achieves an on-resistance variation less than 4.3% throughout the full range (V_pp=1V) of the input signal range. For a 100MHz input with 1V (V_pp) amplitude, the switch has a total harmonic distortion (THD) up to -88.33dB at the 100MHz sampling frequency, about -14.8dB and -29dB increase, compared with the conventional bootstrapped NMOS switch and the standard CMOS transmission gate, respectively. The circuit could be applied to the low-voltage and high speed-resolution switched-capacitor circuits.