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Precision calibration of the silicon doping level in gallium arsenide epitaxial layers |
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| Authors: | D V Mokhov T N Berezovskaya A G Kuzmenkov N A Maleev S N Timoshnev V M Ustinov |
| Affiliation: | 1.St. Petersburg National Research Academic University, Russian Academy of Sciences,St. Petersburg,Russia;2.Ioffe Physical Technical Institute,Russian Academy of Sciences,St. Petersburg,Russia;3.Scientific and Technological Center of Microelectronics and Submicron Heterostructures,Russian Academy of Sciences,St. Petersburg,Russia;4.St. Petersburg State Electrotechnical University LETI,St. Petersburg,Russia;5.Peter the Great St. Petersburg Polytechnic University,St. Petersburg,Russia |
| Abstract: | An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%. |
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