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垂直外腔面发射半导体激光器的热管理方法研究
引用本文:全恩臣,朱仁江,徐向涛,方刚,戴特力.垂直外腔面发射半导体激光器的热管理方法研究[J].四川激光,2014(3):12-13.
作者姓名:全恩臣  朱仁江  徐向涛  方刚  戴特力
作者单位:重庆师范大学物理与电子工程学院重庆市高校光学工程重点实验室,重庆401331
基金项目:基金项目:重庆市教委科研项目(No.kj110618).
摘    要:垂直外腔面发射半导体激光器在高功率运转的同时可以保持良好的光束质量,近年来一直成为研究的热点。本文介绍了垂直外腔面发射半导体激光器的结构及运行原理。由于热管理是其高功率运行的主要限制因素之一,分析了垂直外腔面发射半导体激光器的热管理方法。使用反向生长的外延片通过化学湿法腐蚀去掉砷化镓衬底,得到了约6μm左右的外延片,最后利用808nm的泵浦光进行抽运获得了200mW的连续激光输出。

关 键 词:垂直外腔面发射半导体激光器  热管理  键合  湿法腐蚀

Thermal management study of vertical extemal cavity surface emitting semiconductor laser
Quan En-chen,Zhu ren-jiang,Xu xiang-tao,Fang Gang,Dai Te-li.Thermal management study of vertical extemal cavity surface emitting semiconductor laser[J].Laser Journal,2014(3):12-13.
Authors:Quan En-chen  Zhu ren-jiang  Xu xiang-tao  Fang Gang  Dai Te-li
Affiliation:(Optical Engineering Key Lab of Chongqiong City, College of Physics and Electronic Engineering,Chongqing Normal University, Chongqing 401331)
Abstract:The technology that, while maintaining high power of operation, the Vertical-Extemal-Cavity Surface-Emitting semi-conductor laser (VECSEL) has ability to produce high quality of laser beam, has become popularly-concerned research. The article has demonstrated the structure and operation principle of VECSEL. Further, since the thermoregulation is the main limit to high pow-er operation of VECSEL, the article has analyzed the method of it. The method is to use wet-etching process to remove the GaAs sub-strate of reversed stretching epitaxial wafers to get a new 6μm wafer.Then, by a 808nm pump light, the VECSEL will produce a 200mW continuous laser beam.
Keywords:Vetical External-Cavity Surface-Emitting semiconductor Laser  Thermal management  bonding  wet etching
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