MBE生长InGaAs／GaAs应变层单量子阱激光器结构材料的研究

采用ＶａｒｉａｎＧｅｎⅡＭＢＥ生长系统研究了ＩｎＧａＡｓ／ＧａＡｓ应变层单量子阶（ＳＳＱＷ）激光器结构材料。通过ＭＢＥ生长实验，探索了Ｉｎ＿ｘＧａ＿（１－ｘ）ｔＡｓ／ＧａＡｓＳＳＱＷ激光器发射波长（λ）与Ｉｎ组分（ｘ）和阱宽（Ｌ＿ｚ）的关系，并与理论计算作了比较，两者符合得很好。还研究了材料生长参数对器件性能的影响，主要包括：Ⅴ／Ⅲ束流比，量子阱结构的生长温度Ｔ＿ｇ（ＱＷ），生长速率和掺杂浓度对激光器波长、阈值电流密度、微分量子效率和器件串联电阻的影响。以此为基础，通过优化器件结构和ＭＢＥ生长条件，获得了性能优异的Ｉｎ＿（０．２）Ｇａ＿（０．８）Ａｓ／ＧａＡｓ应变层单量子阱激光器：其次长为９６３ｎｍ，阈值电流密度为１３５Ａ／ｃｍ￣２，微分量子效率为３５．１％。

Study of MBE Growth of InGaAs/GaAs SSQW Laser Structure Materials

InGaAs/GaAs strained single quantum well(SSQW)laser structure materials were studied by using Varian Gen Ⅱ MBE system. The emission wavelength of In_xGa_(1-x)/GaAs SSQW lasers as a function of indium contents(x)and quantum well width was studied experimentally.The results,compared with theoretical calculation were in good agreement.The effects of MBE growth parameters on laser performance were studied.They were mainly the effects of ratio of Ⅴ/Ⅲ BEP,growth temperature of QW,growth rate and dop-ing concentration on laser wavelength,threshold current density,differentialquantum efficiency and series resistance,When the device structures andgrowth condition of MBE materials were optimized,the excellent results oflaser device were obtained.The typical data of In_(0.2)Ga_(0.8)As/GaAs SSQW laserare wavelength λ=963nm,threshold current density J_(th)=135A/cm and differ-entical quantum efficiencyη=35.1%。