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| 气相沉积硅薄膜微结构及悬挂键缺陷研究 | |
| 引用本文： | 黄香平,肖金泉,邓宏贵,杜昊,闻火,黄荣芳,闻立时. 气相沉积硅薄膜微结构及悬挂键缺陷研究[J]. 真空科学与技术学报, 2011, 31(2): 178-182. DOI: 10.3969/j.issn.1672-7126.2011.02.11 |
| 作者姓名： | 黄香平 肖金泉 邓宏贵 杜昊 闻火 黄荣芳 闻立时 |
| 作者单位： | 1. 中南大学物理科学与技术学院,长沙,410083;中国科学院金属研究所,沈阳,110016 2. 中国科学院金属研究所,沈阳,110016 3. 中南大学物理科学与技术学院,长沙,410083 4. 武汉华硅太阳能科技有限责任公司,武汉,430074 |
| 基金项目： | 国家自然科学基金委工程与材料学部青年基金(KFJJ200902); 电子薄膜与集成器件国家重点实室开放课题 |
| 摘 要： | 在单晶Si(100)基体上利用电子回旋共振等离子体增强化学气相沉积法制备硅薄膜,并采用X射线衍射谱(XRD)、透射电镜(TEM)、Raman光谱、电子自旋共振(ESR)波谱等实验方法研究了不同Ar流量下硅薄膜微结构及悬挂键密度的变化。XRD及TEM实验结果得出,制备的硅薄膜的晶粒尺寸为12~16 nm,属纳晶硅薄膜。薄膜结晶度随镀膜时Ar流量增大而增大,而悬挂键密度则先迅速减小而后缓慢增大。当Ar流量为70 ml/min(标准状态)时,薄膜的悬挂键密度达到最低值4.42×1016cm-3。得出最佳Ar流量值为70 ml/min。 |
| 关 键 词： | 纳晶硅 悬挂键密度 电子自旋共振 Raman光谱 |
Research on the Microstructures and Dangling Bond Density of Vapor-Deposited Si Films |
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| Huang Xiangping,Xiao Jinquan,Deng Honggui,Du Uao,Wen Huo,Huang Rongfang,Wen Lishi. Research on the Microstructures and Dangling Bond Density of Vapor-Deposited Si Films[J]. JOurnal of Vacuum Science and Technology, 2011, 31(2): 178-182. DOI: 10.3969/j.issn.1672-7126.2011.02.11 | |
| Authors: | Huang Xiangping Xiao Jinquan Deng Honggui Du Uao Wen Huo Huang Rongfang Wen Lishi |
| Affiliation: | Huang Xiangping1,2,Xiao Jinquan2,Deng Honggui1,Du Hao2,Wen Huo3,Huang Rongfang3,Wen Lishi1,2(1.School of Physics Science and Technology,Central South University,Changsha 410083,China,2.Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,3.China-Silicon Solar Energy Science and Technology Ltd.,Wuhan 430074,China) |
| Abstract: | The Si nano-films were grown by electron cyclotron resonance plasma enhanced chemical vapor deposition(ECR-PECVD) on Si(100) substrates.The impact of argon flow rate on the film growth was studied.The microstructures and variations in dangling bond density were characterized with X-ray diffraction,transmission electron microscopy,and electron spin resonance spectroscopy(ESR).The results show that the argon flow rate significantly affects the microstructures and dangling bond density of the as-deposited Si n... |
| Keywords: | nc-Si Dangling-bond density ESR Raman spectrum |
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