| 杂质不完全离化对MISiC气体传感器的影响 |
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| 引用本文： | 王巍,代作海,王晓磊,唐政维,徐洋,王平. 杂质不完全离化对MISiC气体传感器的影响[J]. 传感器与微系统, 2010, 29(9) |
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| 作者姓名： | 王巍 代作海 王晓磊 唐政维 徐洋 王平 |
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| 作者单位： | 重庆邮电大学光电工程学院;重庆邮电大学自动化学院; |
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| 基金项目： | 教育部重点实验室开放项目，重庆市自然科学基金资助项目，工信部电子发展基金资助项目 |
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| 摘 要： | 研究了杂质不完全离化对金属-绝缘体-碳化硅(MISiC)传感器性能的影响.考虑到Pool-Frenkel效应和外加电场的作用,建立了MISiC器件空间电荷区泊松方程.运用准中性近似,对所建立的泊松方程进行数值计算,得到了空间电荷区的电势分布,进而得到MISiC传感器的,I-V与C-V特性.实验结果表明:室温下SiC器件中杂质不完全离化,随着温度的升高,杂质离化率增大.在外加电场的作用下,杂质的离化率增加,并最终导致MISiC器件I-V与C-V曲线的移动.
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| 关 键 词： | 金属-绝缘体-碳化硅 杂质离化 泊松方程 Pool-Frenkel效应 气体传感器 |
Influence of dopant incomplete ionization on MISiC gas sensor |
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| WANG Wei,DAI Zuo-hai,WANG Xiao-lei,TANG Zheng-Wei,XU Yang,WANG Ping. Influence of dopant incomplete ionization on MISiC gas sensor[J]. Transducer and Microsystem Technology, 2010, 29(9) |
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| Authors: | WANG Wei DAI Zuo-hai WANG Xiao-lei TANG Zheng-Wei XU Yang WANG Ping |
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| Affiliation: | WANG Wei1,DAI Zuo-hai1,WANG Xiao-lei1,TANG Zheng-wei1,XU Yang2,WANG Ping2 (1.College of Electronics Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,China,2.School of Automation,China) |
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| Abstract: | The influence of incomplete ionization on characteristics of metal-insulator-SiC(MISiC) gas sensor is studied.Possion's equation in space charge region of MISiC devices is built up by taking Pool-Frenkel effect and electric field into account.The potential distribution of MISiC is achieved by the numerical solution of the Possion's equation,then the I-V and C-V characteristics of MISiC gas sensor are also got.The results show that the dopant in SiC can't be completely ionized at room temperature and the ion... |
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| Keywords: | metal-insulator-SiC(MISiC) dopant ionization Possion's equation Pool-Frenkel effect gas sensor |
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