Bias Dependence in Spin-Polarized Tunneling of Ferromagnet/Ferromagnetic Insulator (Semiconductor)/Ferromagnet Junctions |
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| Authors: | LI Yun LI Bozang DAI Daosheng |
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| Affiliation: | 1. Department of Physics, Peking University, Beijing 100871, China;2. Institute of Physics & Center for Condensed Matter Physics, the Chinese Academy of Sciences, P. O. Box 603-99, Beijing 100080, China |
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| Abstract: | Based on the nearly-free-electron approximation, the bias dependencies of electron transport properties of ferromagnet/ferromagnetic insulator (semiconductor)/ferromagnet junctions have been studied. Resonances appear in electron transmission probability. These resonances cause oscillations in the zero-temperature tunnel current and the resonances occur in tunnel conductance. Tunnel magnetoresistance (TMR) is an oscillatory function of bias. The TMR can reach a value as high as 100%. The bins dependencies of electron transport properties relate to the magnetic configurations of the junctions. |
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| Keywords: | spin-polarized electron tunneling magnetic tunnel junction ferromagnetic barrier bias dependence |
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