| 金刚石膜/硅基体热残余应力场有限元分析 |
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| 引用本文： | 唐达培,高庆.金刚石膜/硅基体热残余应力场有限元分析[J].人工晶体学报,2007,36(2):377-380. |
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| 作者姓名： | 唐达培 高庆 |
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| 作者单位： | 西南交通大学应用力学与工程系,成都,610031 |
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| 基金项目： | 西南交通大学校科研和教改项目 |
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| 摘 要： | 运用ANSYS软件建立了有限元模型,对化学气相沉积在硅基体上的金刚石膜内部和膜/基交界面处的各热残余应力分量的分布作了计算与分析.所建模型与已有的一维解析模型都能得出厚度截面上的法向应力分量的分布,且吻合较好,而前者的优点在于它还能模拟切向应力和剪应力等其它应力分量,这对分析膜/基界面的粘附与失效是至关重要的.
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| 关 键 词： | 金刚石膜 硅基体 热残余应力 有限元方法 |
| 文章编号： | 1000-985X（2007）02-0377-04 |
| 修稿时间： | 2006-08-17 |
Finite Element Analysis of Thermal Residual Stresses Fields in Diamond Films/Si Substrate |
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| TANG Da-pei,GAO Qing.Finite Element Analysis of Thermal Residual Stresses Fields in Diamond Films/Si Substrate[J].Journal of Synthetic Crystals,2007,36(2):377-380. |
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| Authors: | TANG Da-pei GAO Qing |
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| Affiliation: | Department of Applied Mechanics and Engineering, Southwest Jiaotong University, Chengdu 610031, China |
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| Abstract: | The finite element model was established with ANSYS software.By using it,the distributions of thermal residual stress components in diamond films /Si substrate and at interface between them were simulated.Both the model established in this paper and the known 1-D analytical model can be used to compute the normal stress on the cross section,but the advantages of the former are that the tangential stress and the shear stress can also be obtained from it.These stress components are of utmost important when analyzing the adhesion of diamond films to Si substrate and the films' failure. |
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| Keywords: | diamond films Si substrate thermal residual stresses finite element method |
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