Resistivity and hall-effect topography on photoexcited semi-insulating GaAs |
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Authors: | E Pimentel D C Look |
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Affiliation: | (1) Avionics Laboratory/AADR, 45433 Wright-Patterson AFB, OH;(2) University Research Center, Wright State University, 45435 Dayton, OH |
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Abstract: | A new non-destructive method is presented for obtaining true resistivity (ρ), mobility(μ), and electron concentration(n) topography on photoexcited, semi-insulating GaAs. The method is based on the use of two perpendicular light slits, which
join four removable In contacts on the periphery of the wafer to form a classical Greek-cross configuration. By placing contacts
all around the periphery the whole wafer can be mapped. We give results for 1.1 μm photoexcitation on a 3′ low-pressure, liquid-encapsulated
Czochralski wafer and compare with EL2 results on the same wafer. A by-product of the analysis is the determination of electron
lifetime. Finally, the possibility of nondestructive dark electrical topography is discussed. |
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Keywords: | Topography photo-Hall photoconductivity semi-insulating GaAs |
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