| 高能电子衍射研究H钝化偏角Si衬底上Si,GexSi1-x的分子束外延生长模式 |
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| 引用本文： | 崔堑,黄绮,陈弘,周均铭.高能电子衍射研究H钝化偏角Si衬底上Si,GexSi1-x的分子束外延生长模式[J].物理学报,1996,45(4):647-654. |
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| 作者姓名： | 崔堑 黄绮 陈弘 周均铭 |
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| 作者单位： | 中国科学院物理研究所,北京100080 |
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| 摘 要： | 用高能电子衍射(RHEED)研究H钝化偏角Si衬底上Si,GexSi1-x材料的分子束外延(MBE)生长模式,发现经低温处理的H钝化Si衬底上要经过10nm左右的Si生长才能获得比较平整的表面.Si,GexSi1-x外延时的稳定表面均以双原子台阶为主,双原子台阶与单原子台阶并存的结构.Si双原子台阶上的Si二聚体列(dimerrow)取向垂直于台阶边缘,而GexSi1-x双原
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| 关 键 词： | 分子束外延 硅 锗 高能电子衍射 |
| 收稿时间： | 1994-12-14 |
Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE |
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| GUI QIAN,HUANG QI,CHEN HONG and ZHOU JUN-MING.Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE[J].Acta Physica Sinica,1996,45(4):647-654. |
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| Authors: | GUI QIAN HUANG QI CHEN HONG and ZHOU JUN-MING |
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| Abstract: | A study of Si, GexSi1-x growth mode on H-terminated vicinal Si substrate by RHEED is presented. About 10 nm Si epilayer is required to obtain a smooth Si substrate. Bi-atomic terrace dominate on the stable surface both of Si and GexSi1-x single atomic terrace is present in the mean time. Dimer row on bi-atomic Si terrace is perpendicular to terrace edge while dimer row on GexSi1-x bi-atomic terrace is paraller to it (90°rotation). GexSi1-x bi-atomic terrace edge is more straight than Si one. |
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