Si片多线切割技术与设备的发展现状与趋势

介绍了Si片的多线切割宏观切割机理与微观切割机理,指出控制钢线张力减少钢线震动是切割工艺的重要指标。讨论了切割过程主要影响因素,钢线的外包Cu会造成Si片表面金属残留,钢线磨损影响Si片厚度,砂浆喷嘴和线网角度在形成水平薄膜层时能够获得好的表面质量。分析了钢线带动砂浆进行切割的核心工艺,给出了Si片切割工艺理论切片量的计算方法。并简要概括了目前多线切割技术及设备的国内外发展形势和未来发展趋势,指出未来多线切割技术将朝着提高加工精度与加工效率、降低成本、改良切割用钢线这几个方向迈进。

Development Status and Trends of Si Wafer Multi-Wire Saw Technology and Equipment

The micro mechanism and macro mechanism of multi-wire saw used for Si wafers are introduced.It is noted that the control of wire tension and reduction of vibration were an important indicator of slicing process.The main factors influencing on the slicing process are discussed,it is pointed out that the wrapped copper outside the wire can cause metal residues on wafer surface,the wear of steel wire impact the wafer thickness,the good surface quality can be obtained when slurry nozzle and line network form a ...