Highly oriented growth of n-type ZnO films on p-type single crystalline diamond films and fabrication of high-quality transparent ZnO/diamond heterojunction |
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| Authors: | C.X. Wang C.X. Gao H.W. Liu J.F. Luo |
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| Affiliation: | a State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Science and Engineering, Zhongshan University, Guangzhou 510275, PR China
b State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, PR China |
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| Abstract: | We present the results on the fabrication and characterization of high-quality transparent heterojunction between n-type ZnO film and p-type diamond single crystalline film on the substrate of diamond bulk single crystal. The results indicated that the current density of the fabricated p-n junction reaches 110 A/m2 when the forward bias voltage is 2.5 V, and the turn-on voltage value is about 0.75 V and agreement with the expected value. Moreover, a good rectification characteristic and transparent in the visible light range was obtained in the device. |
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| Keywords: | A. Diamond B. Chemical vapor deposition C. Scanning electron microscopy, X-ray diffraction D. Electrical properties |
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