Enhancement of dielectric characteristics in donor doped Aurivillius SrBi2Ta2O9 ferroelectric ceramics |
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| Affiliation: | 1. Department of Applied Physics, Delhi College of Engineering, Delhi 110042, India;2. National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012, India;1. Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an 710032, China;2. Northwest Institute For Non-ferrous Metal Research, Xi’an 710016, China;1. Department of Applied Physics, College of Applied Science, Kyung Hee University, 1732 Deogyeong-daero, Giheung-Gu, Yongin-City 446-701, Republic of Korea;2. Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, WI 53706, USA;3. Process Development Team, System LSI Division, Samsung Electronics, San #24 Nongseo-Dong, Giheung-Gu, Yongin-City 446-711, Republic of Korea;1. Department of Physics & Astrophysics, University of Delhi, Delhi 110007, India;2. Electroceramics Group, Solid State Physics Laboratory, Timarpur, Delhi 110054, India;3. Laser & Spectroscopy Laboratory, Department of Applied Physics, Indian School of Mines, Dhanbad 826 004, Jharkhand, India;1. Advanced Materials and Nanotechnology Laboratory, Institute of Advanced Technology (ITMA), Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia;2. Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia |
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| Abstract: | In this study, investigations have been made on the crystal structure, surface morphology, dielectric and electrical properties of tungsten doped SrBi2(WxTa1?x)2O9 (0.0 ≤ x ≤ 0.20) ferroelectric ceramics. Dielectric measurements performed as a function of temperature at 1, 10 and 100 kHz show an increase in Curie temperature (Tc) over the composition range of x = 0.05–0.20. W6+ substitution in perovskite-like units results in a sharp dielectric transition at the ferroelectric Curie temperature with the dielectric constant at their respective Curie temperature increasing with tungsten doping. The dielectric loss reduces significantly with tungsten addition. The temperature dependence of ac and dc conductivity vis-à-vis tungsten content shows a decrease in conductivity, which is attributed to the suppression of oxygen vacancies. The activation energy calculated from the Arrhenius plots is found to increase with tungsten content. |
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