Microwave dielectric properties of Re3Ga5O12 (Re: Nd,Sm, Eu,Dy and Yb) ceramics and effect of TiO2 on the microwave dielectric properties of Sm3Ga5O12 ceramics |
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| Affiliation: | 1. Department of Materials Science and Engineering, Korea University, 1-5 Ka Anam-Dong, Sungbuk-Ku, Seoul 136-701, Republic of Korea;2. Korea Institute of Ceramic Engineering and Technology, 233-5 Gasan-Dong, Guemcheon-Gu, Seoul 153-801, Republic of Korea;3. New Materials Evaluation Center, Korea Research Institute of Standards and Science, Daedeok Science Town, Daejeon 305-600, Republic of Korea;1. College of Physics and Information Technology, Shaanxi Normal University, Xi''an, 710062, China;2. School of Science, Anhui University of Science and Technology, Huainan, 232001, China;3. Xian YiXin Middle School, Xi''an, 710062, China;1. Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Material Science and Engineering, Guilin University of Technology, Guilin, 541004, China;2. Key Laboratory of New Processing Technology for Nonferrous Metal & Materials, Ministry of Education, Guilin University of Technology, Guilin, 541004, China;1. College of Electrical and Information Engineering, Hunan University, Changsha, 410082, China;2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China;3. National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, 610054, China;4. School of Physics and Electronics, Hunan University, Changsha, 410082, China |
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| Abstract: | Re3Ga5O12 (Re: Nd, Sm, Eu, Dy and Yb) garnet ceramics sintered at 1350–1500 °C had a high quality factor (Q × f) ranging from 40,000 to 192,173 GHz and a low dielectric constant (?r) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τf) in the range of ?33.7 to ?12.4 ppm/°C. In order to tailor the τf value, TiO2 was added to the Sm3Ga5O12 ceramics, which exhibited good microwave dielectric properties. The relative density and grain size increased with addition of TiO2, resulting in the enhancement of Q × f value. The τf increased with the addition of TiO2. Excellent microwave dielectric properties of ?r = 12.4, Q × f = 240,000 GHz and τf = ?16.1 ppm/°C were obtained from the Sm3Ga5O12 ceramics sintered at 1450 °C for 6 h with 1.0 mol% TiO2. Therefore, Re3Ga5O12 ceramics, especially TiO2-added Sm3Ga5O12 ceramics are good candidates for advanced substrate materials in microwave integrated circuits (MICs) applications. |
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