Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks |
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Authors: | G Reimbold J Mitard X Garros C Leroux G Ghibaudo F Martin |
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Affiliation: | aCEA-LETI, 17 rue des Martyrs, 38054 Grenoble, France;bSTMicroelectronics, 850 rue J. Monnet, 38926 Crolles, France;cIMEP, 3 Parvis Louis Néel, BP 257, 38016 Grenoble, France |
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Abstract: | Positive voltage instabilities are studied for Nmos transistors with hafnium-based high-κ gate stacks. Using an optimized dedicated fast measurement setup, dynamic transient measurements of drain current are performed over more than ten decades of time. The two main phenomena involved, a reversible one known as hysteresis and a nonreversible one known as PBTI are clearly experimentally separated and studied in detail. A physical model is presented, explaining the dynamic behaviour and leading to precise traps physical characteristics and profiles inside the HfO2 layer. PBTI defects in HfO2 are shown to be of a different nature than hysteresis traps. A turn-around effect is evidenced for PBTI above which physical mechanisms seem to change; it has important implications on lifetime determination methodology. Finally, HfSiON experiments are presented for both hysteresis and PBTI and they show that this material is much less critical than HfO2. |
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