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Highly Efficient Nonvolatile Magnetization Switching and Multi-Level States by Current in Single Van der Waals Topological Ferromagnet Fe3GeTe2 |
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| Authors: | Kaixuan Zhang Youjin Lee Matthew J Coak Junghyun Kim Suhan Son Inho Hwang Dong-Su Ko Youngtek Oh Insu Jeon Dohun Kim Changgan Zeng Hyun-Woo Lee Je-Geun Park |
| Affiliation: | 1. Center for Quantum Materials, Seoul National University, Seoul, 08826 South Korea;2. Center for Quantum Materials, Seoul National University, Seoul, 08826 South Korea
Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826 South Korea Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826 South Korea;3. Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826 South Korea Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826 South Korea;4. Samsung Advanced Institute of Technology, Suwon, 16678 South Korea;5. Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826 South Korea;6. International Center for Quantum Design of Functional Materials, Hefei National Laboratory for Physical Sciences at the Microscale, CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026 China;7. Department of Physics, Pohang University of Science and Technology, Pohang, 37673 South Korea Asia Pacific Center for Theoretical Physics, 77 Cheongam-ro, Nam-gu, Pohang, 3773 South Korea |
| Abstract: | Robust multi-level spin memory with the ability to write information electrically is a long-sought capability in spintronics, with great promise for applications. Here, nonvolatile and highly energy-efficient magnetization switching is achieved in a single-material device formed of van-der-Waals (vdW) topological ferromagnet Fe3GeTe2, whose magnetic information can be readily controlled by a tiny current. Furthermore, the switching current density and power dissipation are about 400 and 4000 times smaller than those of the existing spin-orbit-torque magnetic random access memory based on conventional magnet/heavy-metal systems. Most importantly, multi-level states, switched by electrical current are also demonstrated, which can dramatically enhance the information capacity density and reduce computing costs. Thus, the observations combine both high energy efficiency and large information capacity density in one device, showcasing the potential applications of the emerging field of vdW magnets in the field of spin memory and spintronics. |
| Keywords: | magnetization switching multi-level states spintronics spin-orbit-torque-based memory topological magnetic van der Waals Fe 3GeTe 2 |
