关断过程中GTO正向阻断结失效机理的研究

本文重点研究了可关断晶闸管（ＧＴＯ）正向阻断结的三种失效机理，在ＧＴＯ关断过程中，阳极瞬时极峰值功耗，阳极尖峰电压和阳极再加峰值电压达到极限时都可造成正向阻断结的损坏，从而使ＧＴＯ关断失效，从器件内部载流子的输运规律出发，作者阐述了这三个极限参数引起ＧＴＯ失效的机理，建立了三种不同的失效模式；首次研究了ＧＴＯ关断过程中下降时间内瞬地峰值功耗和尖峰电压相对位置的关系。

Study on Failure Mechanisms of GTO Forward Blocking Junction During Turn-off Process

Three failure mechanisms of GTO forward blocking junction have been carefully studied in this paper.During GTO turn off process,the excessive anode transient spike powery,anode spike voltage and anode reapplied peak viltage all can lead to the damage of the forward blocking junction,and thus cause GTO turn off failure.Using the carrier transportation laws of semiconductor device,the auther describes the GTO failure mechanisms caused by these three parameters,sets up three different failure models.and studies the relative location of the anode transient spike power and anode spike voltage during the fall time period of GTO turn off process for the first time.