GaN基微波半导体器件研究进展

GaN基微波器件以其优良的特性而在微波大功率方面具有应用潜力．对GaN半导体材料作了比较和讨论，说明了GaN材料在微波大功率应用方面的优势，并阐述了新型GaN基微波器件的最新进展，通过与其他微波器件的比较表明了GaN调制掺杂场效应晶体管在微波大功率应用方面所具有的明显优势．

Research progress of GaN-based microwave devices

GaN-based microwave devices possess potential in microwave and high power applications, and related researches have been a hotspot in the current compound semiconductor area. A comparison and discussion of GaN's show its great advantages in microwave and high power application. The newest development of several GaN-based microwave devices is also introduced. The advantage of GaN Modulation Doped Field Effect Transistors(MODFETs) in microwave and high power applications is compared with that of other microwave devices finally.