SiNx deposited by in-line PECVD for multi-crystalline silicon solar cells |
| |
| Authors: | MC Wei SJ Chang CY Tsia CH Liu SC Chen |
| |
| Affiliation: | aInstitute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan;bE-Ton Solar Tech. Corp. Ltd., Tainan 709, Taiwan;cDepartment of Electronic Engineering, Nan Jeon Institute of Technology, Yan-Hsui 737, Taiwan;dDepartment of Electronic Engineering, National Yunlin University of Science and Technology, Touliu 640, Taiwan |
| |
| Abstract: | SiNx:H anti-reflective coating (ARC) layers were successfully grown by an in-line plasma enhanced chemical vapor deposition (PECVD) system with an extremely high throughput. Film thickness and refractive index of the as-grown samples were evaluated as functions of growth parameters, such as growth pressure, total gas flow rate, radio frequency (RF) power and SiH4 to NH3 gas ratio. It was found that we could achieve high quality films with proper growth conditions and proper post-deposition annealing. |
| |
| Keywords: | In-line PECVD SiNx:H Anti-reflection coating Throughput |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
