| 非晶硅薄膜表面与非晶须特性 |
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| 引用本文： | 林鸿溢. 非晶硅薄膜表面与非晶须特性[J]. 材料研究学报, 1990, 4(3): 273-276 |
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| 作者姓名： | 林鸿溢 |
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| 作者单位： | 北京理工大学 |
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| 摘 要： | 利用透射电子显微镜(TEM),观测到未见报道的须状微结构,称为非晶须。提出非晶须可能的生长条件是淀积系统中出现大的过饱和气压。X 射线光电子能谱分析表明,非晶硅与其表面SiO_2之间存在化学成分为 SiO_x(0
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| 关 键 词： | 非晶态硅 薄膜 表面 界面 非晶须 微结构 |
| 收稿时间： | 1990-06-25 |
| 修稿时间： | 1990-06-25 |
PROPERTIES OF SURFACE AND WHISKER-LIKE MICROSTRUCTURES OF AMORPHOUS SILICON |
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| LIN Hongyi. PROPERTIES OF SURFACE AND WHISKER-LIKE MICROSTRUCTURES OF AMORPHOUS SILICON[J]. Chinese Journal of Materials Research, 1990, 4(3): 273-276 |
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| Authors: | LIN Hongyi |
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| Affiliation: | Beijing Institute of Technology |
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| Abstract: | The surface,the interface and the microstructures of the undoped hydrogenated amorphoussilicon films by RF plasma chemical vapor deposition are investigated.The whisker-like microstructures(amorphous silicon whisker)are observed by transmission electron microscope(TEM).The X-rayphotoelectron spectroscopy(XPS)analysis shows that the SiO_2/SiO_x/a-Si structure in the interface be-tween SiO_2 and amorphous silicon are formed at room temperature.The chemical composition of the tran-sition region of the interface in the SiO_2/a-Si are SiO_x(0
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| Keywords: | amorphous silicon film surface interface amorphous silicon whisker microstructure |
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