| 新工艺生长的InGaN量子点的结构与电学性质研究 |
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| 引用本文： | 曲宝壮,朱勤生,陈振,陆大成,韩培德,刘祥林,王晓晖,孙学浩,李昱峰,陆沅,黎大兵,王占国. 新工艺生长的InGaN量子点的结构与电学性质研究[J]. 功能材料与器件学报, 2003, 9(1): 13-16 |
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| 作者姓名： | 曲宝壮 朱勤生 陈振 陆大成 韩培德 刘祥林 王晓晖 孙学浩 李昱峰 陆沅 黎大兵 王占国 |
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| 作者单位： | 中国科学院半导体所材料开放实验室,北京,100083 |
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| 基金项目： | 国家自然科学基金(No.60086001,No.69906002)，973基金(No.G20000683) |
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| 摘 要： | 利用金属有机化学气相沉积（MOCVD）技术，采用一种称为低温钝化的新生和方法成功地生长出多层InGaN/GaN量子点。这种方法是对GaN表面进行钝化并在低温下生长，从而增加表面吸附原子的迁移势垒。采用原子力显微镜清楚地观察到该方法生长的样品中岛状的量子点。从量子点样品的I-V特性曲线观察到了共振隧穿引起的负阻效应，其中的锯齿状峰形归因于零维量子点的共振隧穿。
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| 关 键 词： | 量子点 MOCVD 共振隧穿 InGaN／GaN |
| 文章编号： | 1007-4252(2003)01-0013-04 |
| 修稿时间： | 2002-07-01 |
Structure and I- V characteristics of InGaN quantum dots grown by a new method |
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| QU Bao-zhuang,ZHU Qin-sheng,CHEN Zhen,LU Da-cheng,HAN Pei-de,LIU Xiang-lin,WANG Xiao-hui,SUN Xue-hao,LI Yu-feng,LU Yuan,LI Da-bing,WANG Zhan-guo. Structure and I- V characteristics of InGaN quantum dots grown by a new method[J]. Journal of Functional Materials and Devices, 2003, 9(1): 13-16 |
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| Authors: | QU Bao-zhuang ZHU Qin-sheng CHEN Zhen LU Da-cheng HAN Pei-de LIU Xiang-lin WANG Xiao-hui SUN Xue-hao LI Yu-feng LU Yuan LI Da-bing WANG Zhan-guo |
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| Abstract: | A new method was adopted to grow multi-sheet InGaN/GaN quantum dots successfully by metalorganic chemical vapor deposition (MOCVD). The new method can be called passivation low-temperature method which can increase the energy barrier of adatom hopping by surface passivation andlow temperature of growth. The island shaped InGaN quantum dots are revealed by atomic force micro-scopy. Negative differential resistance effect by resonant tunneling can be observed from the I-V characteristics of the 4-sheet InGaN/GaN quantum dots, the indent peaks in which are attributed to resonant tunneling of the zero-dimensional states in the InGaN quantum dots. |
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| Keywords: | quantum dots MOCVD resonant tunneling InGaN/GaN |
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