New high-rate dry etch mixture for INP-based heterostructures |
| |
| Authors: | Pearton SJ Chakrabarti UK Coblentz D Ren F Fullowan TR Katz A |
| |
| Affiliation: | AT&T Bell Labs., Murray Hill, NJ, USA; |
| |
| Abstract: | A dry etch mixture based on HI/H/sub 2/ is shown to provide smooth, equirate removal of InP and InGaAsP at rates of approximately 2000 AA min/sup -1/ even for very low (-100 V) DC biases on the sample. This is significantly faster than the rates obtained with the more conventional CH/sub 4//H/sub 2/ mixtures commonly used for dry etching of InP-based heterostructures. Metal masks (Ni, Pt, Mo, Ti and Al) show minimal erosion during exposure to HI/H/sub 2/ discharges, and other common masking materials (Au, SiO/sub 2/) also show very low removal rates (<20 AA min/sup -1/) for low (> |
| |
| Keywords: | |
|
|
