| n型InP(100)衬底上电沉积氧化锌薄膜的 |
| |
| 引用本文： | 翁占坤,刘爱民,刘艳红,胡增权.n型InP(100)衬底上电沉积氧化锌薄膜的[J].发光学报,2008,29(2):283-288. |
| |
| 作者姓名： | 翁占坤 刘爱民 刘艳红 胡增权 |
| |
| 作者单位： | 1. 大连理工大学,三束国家重点实验室,物理与光电工程学院,辽宁,大连,116024;长春理工大学,生命科学技术学院,吉林,长春,130022
2. 大连理工大学,三束国家重点实验室,物理与光电工程学院,辽宁,大连,116024 |
| |
| 摘 要： | 采用电化学沉积方法在n型InP(100)(1016)衬底上制备了氧化锌薄膜。探索线性扫描伏安法确定InP与0.1mol/LZn(NO3)2电解液的体系中沉积氧化锌的极化电势,在20℃溶液中,相对于甘汞电极(SCE)的极化电势为-1.1877V。扫描电镜照片显示:随着应用电势的降低,氧化锌薄膜变得紧密平滑;狭窄的X射线衍射峰也说明低电势下薄膜的结晶质量较好。光荧光表征发现低电势下制备的氧化锌薄膜具有良好的发光特性。
|
| 关 键 词： | 氧化锌薄膜 电沉积 X射线衍射 光致发光 |
| 文章编号： | 1000-7032(2008)02-0283-06 |
| 修稿时间： | 2007年8月25日 |
Photoluminescence and Formation of ZnO Thin Films on n-InP(100) by Electrodeposition |
| |
| WENG Zhan-kun,LIU Ai-min,LIU Yan-hong,HU Zeng-quan.Photoluminescence and Formation of ZnO Thin Films on n-InP(100) by Electrodeposition[J].Chinese Journal of Luminescence,2008,29(2):283-288. |
| |
| Authors: | WENG Zhan-kun LIU Ai-min LIU Yan-hong HU Zeng-quan |
| |
| Abstract: | The ZnO thin films are fabricated by electrodeposition on n-type InP wafers at constant potential. Polarization potential of the deposition of ZnO is firstly confirmed using linear sweep voltammetry in 0.1 mol/L Zn(NO3)2 electrolyte/InP system, which is -1.187 7 V vs. SCE at 20 ℃. Scanning electron microscopy shows that the thin films become smooth and compact with decreasing applied potential, and the narrow X-ray diffraction peaks also show the good crystal quality of the thin films. The optical properties of ZnO thin films are studied by photoluminescence spectrum measurements. The ZnO thin films obtained at low potential exhibits good photoluminescence. |
| |
| Keywords: | ZnO thin films electrodeposition XRD PL |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
