Sensitive thermosensors on the basis of highly compensated silicon |
| |
Authors: | M. K. Bakhadyrkhanov S. A. Valiev S. S. Nasriddinov S. A. Tachilin |
| |
Affiliation: | (1) Tashkent State Technical University, ul. Universitetskaya 2, Tashkent, 700095, Republic of Uzbekistan |
| |
Abstract: | The results of studies and working out and creation of a thermosensor on the basis of highly compensated silicon doped with Mn and S are presented in this work. It is stated that the thermosensitivity and the stability of the parameters of the worked out thermosensor are higher than those of the existing sensitive thermosensor. It is stated that the thermosensor on the basis of highly compensated silicon doped with manganese Si〈B,Mn〉 more effectively functions in the region of temperaturesT= 100–400 K, and the thermosensor on the basis of Si〈B,S〉 can be successfully used in the region of more high temperaturesT= 200–450°C. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|