Pressure infiltrated Cu/diamond composites for LED applications |
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Authors: | Yeming Fan Hong Guo Jun Xu Ke Chu Xuexin Zhu Chengchang Jia Fazhang Yin Ximin Zhang |
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Affiliation: | 1. Nonferrous Metal Processing Division,General Research Institute for Nonferrous Metals,Beijing 100088,China 2. Institute of Powder Metallurgy,University of Science and Technology Beijing,Beijing 100083,China |
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Abstract: | Diamond reinforced copper (Cu/diamond) composites were prepared by a pressure infiltration technique. The composites show a super high conductivity of 713 W·m−1·K−1 in combination with an extremely low coefficient of thermal expansion (CTE) of 7.72 × 10−6 K−1 (25–100°C), which are achieved by modifying the copper matrix with adding 0.3 wt.% of boron to get a good thermal contact between the matrix and the diamond particles. By adopting a series of postmachining techniques the composites were made into near-net-shape parts, and an electroless silver coating was also successfully plated on the composites. Finally, their potential applications in the thermal management of light emitting diodes (LED) were illustrated via prototype examples. |
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Keywords: | light emitting diodes (LED) metallic matrix composites copper alloys diamond infiltration thermal conductivity |
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