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Modelling strategies for the incorporation and correction of optical effects in EUVL
Authors:Piyush Pathak  Qiliang Yan  Thomas Schmoeller  Ebo Croffie  Artak Isoyan  Lawrence S Melvin III
Affiliation:1. Synopsys, Inc. 2025 NW Cornelius Pass Road, Hillsboro, OR 97124, United States;2. Synopsys, Inc. GmbH, Karl-Hammerschmidt-Str 34, D-85609 Aschheim/Dornach, Germany;1. Department of Oral, Maxillofacial and Plastic Facial Surgery, RWTH Aachen University Hospital, Aachen, Germany;2. Department of Orthodontics, RWTH Aachen University Hospital, Aachen, Germany;3. Department of Orthopaedic Trauma, RWTH Aachen University Hospital, Aachen, Germany;4. Department of Oral and Maxillofacial Surgery, Hannover Medical School, Hannover, Germany;1. Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland;2. Institute of Physics, Polish Academy of Sciences.,32/46 Aleje Lotników, 02-668 Warsaw, Poland;3. Faculty of Biomedical Engineering, Czech Technical University, Nám. Sítná 3105, Kladno, Czech Republic;1. Wenzheng College of Soochow University, Suzhou 215104, China;2. College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
Abstract:Extreme ultraviolet lithography (EUVL) is a leading candidate for the 22 nm node lithography and beyond. However, there are still some critical problems before EUVL may be deployed in high-volume manufacturing. One of the critical problems is to estimate the EUVL aerial image formation for optical proximity correction (OPC) in order to compensate for EUVL effects such as shadowing and flare. This study discusses aerial image formation through modeling of optical transfer function to assimilate optical diffraction, long range layout dependent flare effects, and shadowing effects due to non-telecentric imaging optics in the EUV case. Hence, after optimizing optical process parameters to model the EUV aerial image, this study will investigate OPC modeling methods employed to compensate these optical effects in the mask design flow.
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