首页 | 官方网站   微博 | 高级检索  
     

有机双层薄膜器件界面限制传导温度特性研究
引用本文:杨青森,彭应全,邢宏伟,李训栓,袁建挺,马朝柱,赵明. 有机双层薄膜器件界面限制传导温度特性研究[J]. 半导体学报, 2008, 29(6): 1075-1080
作者姓名:杨青森  彭应全  邢宏伟  李训栓  袁建挺  马朝柱  赵明
作者单位:兰州大学物理科学与技术学院,兰州,730000;兰州大学物理科学与技术学院,兰州,730000;兰州大学物理科学与技术学院,兰州,730000;兰州大学物理科学与技术学院,兰州,730000;兰州大学物理科学与技术学院,兰州,730000;兰州大学物理科学与技术学院,兰州,730000;兰州大学物理科学与技术学院,兰州,730000
摘    要:通过对器件的温度特性的研究,能够使器件在合适的温度下保持稳定的工作状态.本文以Miller-Abrahams跳跃传导理论为基础,建立了有机-有机界面限制电流传导的电荷传输的解析模型.依据此模型分析了结构为“注入电极/有机层Ⅰ/有机层Ⅱ/收集电极”的双层薄膜器件在有机界面限制电流传导状态下的电流、电场和载流子分布与工作温度的变化关系.结果表明,在给定的工作电压下,温度升高时降落在层Ⅰ的电压升高,电场增强,而降落在层Ⅱ的电压降低,电场减弱,同时器件的电流增大.

关 键 词:有机-有机界面限制  温度特性  数值分析

Temperature Characteristics of Bilayer Thin-Film Devices Under Organic Interface Limited Current Conduction
Yang Qingsen,Peng Yingquan,Xing Hongwei,Li Xunshuan,Yuan Jianting,Ma Chaozhu and Zhao Ming. Temperature Characteristics of Bilayer Thin-Film Devices Under Organic Interface Limited Current Conduction[J]. Chinese Journal of Semiconductors, 2008, 29(6): 1075-1080
Authors:Yang Qingsen  Peng Yingquan  Xing Hongwei  Li Xunshuan  Yuan Jianting  Ma Chaozhu  Zhao Ming
Affiliation:School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China
Abstract:Temperature characteristics are important for the performance of organic thin film devices.On the basis of the hopping theory of Miller-Abrahams,an analytical model of charge transport for bilayer organic devices under the organic-organic interface limited current conduction is developed.The dependence of current,field,and carrier distribution in bilayer organic devices with the structure of "injection electrode/LayerI/LayerII/collection electrode" on temperature are numerically analyzed.We conclude that,for a given applied voltage,when temperature is raised,the voltage of LayerIwill increase,and the field will be higher.Meanwhile,the voltage of LayerIIwill decrease,the field will become weaker accordingly,and the current of the device will increase.
Keywords:organic-organic interface limited  temperature characteristics  numerical analysis
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《半导体学报》浏览原始摘要信息
点击此处可从《半导体学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号