| 图像传感器单粒子效应脉冲激光实验研究 |
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| 引用本文： | 曹洲,;把得东,;薛玉雄,;高欣,;安恒,;陈世军,;翟厚明.图像传感器单粒子效应脉冲激光实验研究[J].真空与低温,2014(3):132-135. |
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| 作者姓名： | 曹洲 ;把得东 ;薛玉雄 ;高欣 ;安恒 ;陈世军 ;翟厚明 |
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| 作者单位： | [1]兰州空间技术物理研究所真空低温技术与物理重点实验室,甘肃兰州730000; [2]上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083 |
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| 基金项目： | 中国科学院红外材料与器件重点实验室基金资助项目（IMVKFJJ-12-08） |
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| 摘 要： | 针对设计研制的512×512 CMOS APS图像传感器,采用聚焦脉冲激光束研究了其空间单粒子效应特性。试验结果表明,CMOS APS器件图像传感器存在单粒子翻转（SEU）和单粒子锁定（SEL）现象。验证了CMOS APS图像传感器抗单粒子锁定设计的有效性。当对图像传感器移位寄存器区进行照射时,同时发生单粒子翻转和单粒子锁定,器件其它区域也有类似现象。分析了器件单粒子效应的敏感性,获得了器件发生单粒子翻转和锁定的脉冲激光能量阈值及器件锁定电流大小。
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| 关 键 词： | 单粒子效应 脉冲激光 CMOS APS图像传感器 |
EXPERIMENTAL RESEARCH ON SINGLE EVENT EFFECTS OF CMOS APS IMAGE SENSOR |
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| Affiliation: | CAO Zhou, BA De-dong, XUE Yu-xiong , GAO Xin, AN Heng , CHEN Shi-jun, ZHAI Hou-ming( 1. Science and Technology on Vacuum ＆ Cryogenics Technology and Physics Laboratory, Lanzhou Institute of Space Technology and Physics, Lanzhou Gansu 730000, China; 2. Key Laboratory of Infrared-materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China) |
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| Abstract: | The single event effects of 512 × 512 CMOS active pixel image sensors fabricated by Key Laboratory of Infrared-materials and Devices has been study experimentally by using pulsed laser beams. The single event upsets（ SEU） and single event latchup（ SEL） has been observed when CMOS active pixel image sensors exposure to pulsed laser beam. The validity of measures on chip against to SEL has been verified. At the cases of shift register area where exposure to pulsed laser beam,the SEU and SEL has been observed simultaneously. The same phenomenon has been also observed in the other areas on chip. The characteristic of single event effects on CMOS active pixel sensor has been analyzed. The critical energy of pulsed laser beam inducing SEU and SEL has been gained and the current value of SEL has been measured experimentally. |
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| Keywords: | single event effects pulsed laser beam CMOS APS image sensor |
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