The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability |
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Authors: | Milan Ťapajna Nicole Killat Uttiya Chowdhury Jose L. Jimenez Martin Kuball |
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Affiliation: | 1. Centre for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, UK;2. TriQuint Semiconductor, 500 West Renner Road, Richardson, TX 13440, USA |
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Abstract: | Reliability of AlGaN/GaN HEMTs processed with different surface oxidation levels was studied using electrical and optical methods. It was found that HEMTs with more surface oxide content are more susceptible to degradation in terms of gate leakage and trapping characteristics, although this oxide layer initially passivates surface traps. In the degraded devices, trap level with activation energy of 0.45–0.47 eV was observed and attributed to surface related traps. This indicates that oxygen may play a crucial role for AlGaN/GaN HEMT reliability. |
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