AlGaAs/GaAs超薄基区负阻HBT的研制与模拟

利用化学湿法选择技术和监控电极技术设计并研制了一种新型台面结构超薄基区AlGaAs/GaAs负阻异质结双极晶体管,该器件具有独特且显著的电压控制型负阻特性,其峰谷比可高于120.通过器件模拟分析,解释了该器件产生负阻的原因,即不断增加的集电极电压致使超薄基区穿通,器件由双极管工作状态向体势垒管工作状态转化造成的.另外,模拟结果表明器件可能具有较高频率特性(fT约为60～80GHz).

Fabrication and Simulation of an AIGaAs/GaAs Ultra-Thin Base NDR HBT

A novel mesa ultra-thin base AlGaAs/GaAs HBT is designed and fabricated with wet chemical selective etch technique and monitor electrode technique. It has a particular and obvious voltage-controlled NDR whose PVCR is larger than 120. By use of device simulation, the cause of NDR is that increasing collector voltage makes the ultrathin base reach through and the device transforms from a bipolar state to a bulk barrier state. In addition, the simulated cutoff frequency is about 60～80GHz.