Low-threshold operation of 1.34-/spl mu/m GaInNAs VCSEL grown by MOVPE |
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| Authors: | M. Yamada T. Anan H. Hatakeyama K. Tokutome N. Suzuki T. Nakamura K. Nishi |
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| Affiliation: | Syst. Devices Res. Labs., NEC Corp., Shiga, Japan; |
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| Abstract: | Low-threshold operation was demonstrated for a 1.34-/spl mu/m vertical-cavity surface-emitting laser (VCSEL) with GaInNAs quantum wells (QWs) grown by metal-organic vapor-phase epitaxy. Optimizing the growth conditions and QW structure of the GaInNAs active layers resulted in edge-emitting lasers that oscillated with low threshold current densities of 0.87 kA/cm/sup 2/ at 1.34 /spl mu/m and 1.1 kA/cm/sup 2/ at 1.38 /spl mu/m, respectively. The VCSEL had a low threshold current of 2.8 mA and a lasing wavelength of 1.342 /spl mu/m at room temperature and operated up to 60/spl deg/C. |
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