| 惯性约束聚变靶中硅支撑冷却臂的制备 |
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| 引用本文： | 张继成,罗跃川,马志波,杨苗,周民杰,李佳,吴卫东,唐永建.惯性约束聚变靶中硅支撑冷却臂的制备[J].强激光与粒子束,2013,25(12):3251-3254. |
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| 作者姓名： | 张继成 罗跃川 马志波 杨苗 周民杰 李佳 吴卫东 唐永建 |
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| 作者单位： | 1.中国工程物理研究院 激光聚变研究中心, 四川 绵阳 621 900; |
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| 摘 要： | 论述了基于反应离子深刻蚀技术加工惯性约束聚变（ICF）靶的硅支撑冷却臂。利用扫描电子显微镜、白光干涉仪和视觉显微系统等对所制备的硅支撑冷却臂的形貌、侧壁陡直度和卡爪径向形变量等参数进行了表征分析。分析结果表明，硅支撑冷却臂的侧壁陡直度大于88，卡爪径向形变量大于20 m，符合靶的设计要求。
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| 关 键 词： | 惯性约束聚变靶 硅支撑冷却臂 反应离子深刻蚀 |
| 收稿时间： | 2013-07-22 |
Fabrication of silicon microstructure for ICF target |
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| Affiliation: | 1.Research Center of Laser Fusion,CAEP,P.O.Box 919-987,Mianyang 621900,China;2.Micro and Nano Electromechanical Systems Laboratory,Northwestern Polytechnical University,Xi’an 710072,China |
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| Abstract: | Silicon flexure microstructure has very important function for supporting and cooling roles in ICF target. In this paper, a silicon arm is fabricated using deep reactive ion etching(DRIE) method. The results of scanning electron microscopy(SEM), white light interferometer and optical microscopy measurement show that the Si microstructure has a smooth surface and vertical sidewalls, the angle of vertical sidewall is nearly 88 degrees. The displacement of silicon flexure microstructure along radial direction is more than 20 m. |
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