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Memories of tomorrow |
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| Authors: | Reohr W. Honigschmid H. Robertazzi R. Gogl D. Pesavento F. Lammers S. Lewis K. Arndt C. Yu Lu Viehmann H. Scheuerlein R. Li-Kong Wang Trouilloud P. Parkin S. Gallagher W. Muller G. |
| Affiliation: | IBM/Infineon Technol., IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY; |
| Abstract: | With the promise of nonvolatility, practically infinite write endurance, and short read and write times, magnetic tunnel junction magnetic random access memory could become a future mainstream memory technology. |
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