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The coupling effect of air-bridges on broadband spiral inductors in SiC-based MMIC technology
Affiliation:1.School of Advanced Material and Nanotechnology, Xidian University, Xi'an 710071, China;2.School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract:The coupling effect of air-bridges on broadband spiral inductors in SiC-based MMIC technology has been investigated deeply. The fabricated 1-nH spiral inductor on SiC substrate demonstrates a self-resonant frequency of 51.6 GHz, with a peak Q-fact of 12.14 at 22.1 GHz. From the S-parameters measurements, the exponential decay phenomenon is observed for L, Q-factor, and SRF with the air-bridge height decreasing, and an analytic expression is concluded to exactly fit the measured data which can be used to predict the performance of the spiral inductor. All the coefficients in the formula have specific meaning. By means of establishing the lumped model, the parasitic coupling capacitance of the air-bridge has been extracted and presents the exponential decay with the air-bridge heights decreasing which indicates that this capacitor is directly related to the coupling effect of the air-bridge. Through the electromagnetic field distribution simulation, the details of the electric field around the air-bridge have been presented which demonstrate the formation and the variation principles of the coupling effect.
Keywords:coupling effect  air-bridge  broadband spiral inductor  exponential decay  SiC  MMIC  
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