2.5D硅转接板TSV结构研究

针对结构参数对TSV可靠性影响不明确的问题,文中采用有限元分析和模型简化的方法,分析了TSV结构在温度循环条件下的应力应变分布,并进一步研究了铜柱直径、SiO₂层厚度以及TSV节距等结构参数对TSV结构可靠性的影响。结果表明,采用文中的方法简化模型后得出的结果拟合度在0.95以上;在TSV结构上施加温度循环载荷时,在SiO₂界面会出现应力集中,而在钝化层中会出现应变增大;改变铜柱直径、绝缘层厚度和TSV节距将显著影响TSV结构的可靠性;减小填充铜的直径、增加SiO₂层的厚度、增加TSV节距,都将有助于减小TSV结构的最大应力。

Research on TSV Structure of 2.5D Silicon Interposer

Aiming at the problem that the influence of structural parameters on the reliability of TSV is not clear, the finite element analysis and model simplification method were used to analyze the stress-strain distribution of TSV structure under temperature cycling conditions. The effect of structural parameters including copper pillar diameter, SiO₂ layer thickness and TSV pitch on the reliability of TSV structure were further studied. The results showed that the fitting degree of the results obtained by simplifying the model was above 0.95. When the temperature cyclic load was applied to the TSV structure, stress concentration would occur at the SiO₂ interface, and strain increase would occur in the passivation layer. Changing the copper column diameter, insulation thickness and TSV pitch could significantly affect the reliability of the TSV structure. Reducing the diameter of the filled copper, increasing the thickness of the SiO₂ layer, and increasing the TSV pitch all helped to reduce the maximum stress of the TSV structure.