Effects of deposition pressure and plasma power on the growth and properties of boron-doped microcrystalline silicon films |
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| Authors: | Chen Yong-Sheng Yang Shi-E Wang Jian-Hu Lu Jing-Xiao Gao Xiao-Yong Gu Jin-Hu Zheng Wen and Zhao Shang-Li |
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| Affiliation: | Depart of Materials Science and Engineering, Wuhan
Institute of Technology, Wuhan 430073, China; Key Laboratory of Material Physics, Department
of Physics,
Zhengzhou University, Zhengzhou 450052, China; Key Laboratory of Material Physics, Department
of Physics,
Zhengzhou University, Zhengzhou 450052, China；Institute of Plasma Physics, Chinese Academy of Sciences,
Hefei 230031, China |
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| Abstract: | Using diborane as doping gas, p-doped $\mu $c-Si:H layers are
deposited by using the plasma enhanced chemical vapour deposition
(PECVD) technology. The effects of deposition pressure and plasma
power on the growth and the properties of $\mu $c-Si:H layers are
investigated. The results show that the deposition rate, the
electrical and the structural properties are all strongly dependent
on deposition pressure and plasma power. Boron-doped $\mu $c-Si:H
films with a dark conductivity as high as 1.42\,$\Omega ^{ -
1}\cdot$cm$^{ - 1}$ and a crystallinity of above 50{\%} are obtained.
With this p-layer, $\mu $c-Si:H solar cells are fabricated. In
addition, the mechanism for the effects of deposition pressure and
plasma power on the growth and the properties of boron-doped $\mu
$c-Si:H layers is discussed. |
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| Keywords: | boron-doped $\mu $c-Si:H films thin film solar cells Raman crystallinity dark conductivity |
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