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基于一种新架构的4GH 32比特的直接数字频率合成器
作者姓名:Wu Jin  Chen Jianwu  Wu Danyu  Zhou Lei  Jiang Fan  Jin Zhi  Liu Xinyu
作者单位:Institute of Microelectronics, Chinese Academy of Sciences;Key Laboratory of Microelectronics Devices & Integrated Technology
基金项目:Project supported by the National Basic Research Program of China (No. 2010CB327505).
摘    要:This paper presents a novel direct digital frequency synthesizer(DDFS)architecture based on nonlinear DAC coarse quantization and the ROM-based piecewise approximation method,which has the advantages of high speed,low power and low hardware resources.By subdividing the sinusoid into a collection of phase segments,the same initial value of each segment is realized by a nonlinear DAC.The ROM is decomposed with a coarse ROM and fine ROM using the piecewise approximation method.Then,the coarse ROM stores the offsets between the initial value of the common segment and the initial value of each line in the same segment.Meanwhile,the fine ROM stores the differences between the line values and the initial value of each line.A ROM compression ratio of32 can be achieved in the case of 11 bit phase and 9 bit amplitude.Based on the above method,a prototype chip was fabricated using 1.4 m GaAs HBT technology.The measurement shows an average spurious-free dynamic range(SFDR)of 45 dBc,with the worst SFDR only 40.07 dBc at a 4.0 GHz clock.The chip area is 4.6 3.7 mm2and it consumes 7 W from a–4.9 V power supply.

关 键 词:direct  digital  frequency  synthesis  read-only  memory  digital-to-analog  converter  gallium  arsenide  heterojunction  bipolar  transistor

A 4 GHz 32 bit direct digital frequency synthesizer based on a novel architecture
Wu Jin,Chen Jianwu,Wu Danyu,Zhou Lei,Jiang Fan,Jin Zhi,Liu Xinyu.A 4 GHz 32 bit direct digital frequency synthesizer based on a novel architecture[J].Chinese Journal of Semiconductors,2013,34(11):115007-6.
Authors:Wu Jin  Chen Jianwu  Wu Danyu  Zhou Lei  Jiang Fan  Jin Zhi and Liu Xinyu
Affiliation:Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Beijing 100029, China
Abstract:direct digital frequency synthesis read-only memory digital-to-analog converter gallium arsenide heterojunction bipolar transistor
Keywords:direct digital frequency synthesis  read-only memory  digital-to-analog converter  gallium arsenide  heterojunction bipolar transistor
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