Fabrication of 0.5-μm structures by dry electron lithography and anisotropic plasma etching |
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| Authors: | I I Amirov V A Fedorov |
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| Affiliation: | (1) Institute of Microelectronics and Informatics, Russian Academy of Sciences, ul. Universitetskaya 21, 150007 Yaroslavl, Russia |
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| Abstract: | A method for the fabrication of submicron (~0.5 μm) structures is presented. It includes the plasma formation of a three-layer
mask, electron-beam exposure, plasma development, and anisotropic plasma etching of a resist and silicon oxide. The development
in a fluorine-containing plasma forms the negative image of the exposed pattern (a set of parallel strips). The minimum resolution
was 0.5 μm at the exposure dose 8 x l0-4C/cm2. The minimum exposure dose at which separate lines are developed was equal to 1 x 10-4 C/cm2 |
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