Analytical Modeling of a Triple Material Double Gate TFET with Hetero-Dielectric Gate Stack |
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Authors: | Gupta Santosh Kumar Kumar Satyaveer |
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Affiliation: | 1.Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology Allahabad, Allahabad, 211004, India ; |
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Abstract: | Silicon - In this paper, we propose and develop an analytical model of a Triple material double gate Tunnel Field Effect Transistor (TM-DG TFET) with hetero-dielectric gate oxide stack comprising... |
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