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Analytical Modeling of a Triple Material Double Gate TFET with Hetero-Dielectric Gate Stack
Authors:Gupta  Santosh Kumar  Kumar   Satyaveer
Affiliation:1.Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology Allahabad, Allahabad, 211004, India
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Abstract:Silicon - In this paper, we propose and develop an analytical model of a Triple material double gate Tunnel Field Effect Transistor (TM-DG TFET) with hetero-dielectric gate oxide stack comprising...
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