半绝缘GaAs单晶的研制

本文介绍原位合成生长半绝缘GaAs单晶研究与杂质分析结果。Ga、As比的控制,坩埚材料,热处理等条件均对单晶质量产生影响。制得直径75mm、重2.2kg的半绝缘GaAs单晶。典型电参数为:ρ300K≥10~7Ω·cm,μ300K=5380cm~2/V·s。经850℃热处理15分钟,Rs>10~7/□。利用本实验制得的半绝缘GaAs单晶,经外延、离子注入后制成的场效应管性能良好。

Investigation for SI GaAs Single Crystal Growth

This paper introduces a method of growing SI GaAs by in-situ synthesis and gives the results of impurity analysis. The single crystal quality is affected by the Ga/As ratio, the crucible material and the condition of heat treatment, etc. The optimum, electrical parameters of SI GaAs single crystal are as follows, ρ300K≥107Ω ·cm, μ300K = 5380cm2/V·S; diameter 75mm; weight 2.2kg; and Rs>107Ω/□ (with heat treatment for 15 minutes at 850℃ in hydrogen). The performances of FET fabricated by the SI GaAs single crystal with epitaxy and implantation are excellent.