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LED蓝宝石图形化衬底的研究进展及发展趋势
引用本文:张钦亮,金志杰,雍春娥,苏静洪,王谟,平志韩. LED蓝宝石图形化衬底的研究进展及发展趋势[J]. 电子工业专用设备, 2012, 41(12): 10-16
作者姓名:张钦亮  金志杰  雍春娥  苏静洪  王谟  平志韩
作者单位:天通吉成机器技术有限公司,浙江海宁,314400
摘    要:图形化蓝宝石衬底作为GaN基LED照明外延衬底材料,由于其能降低GaN外延薄膜的线位错密度和提高LED的光萃取效率的显著性能在近几年来引起国内外许多科研机构和厂商的广泛兴趣。从衬底的制备工艺、图形尺寸角度出发,综述了图形化蓝宝石衬底GaN基LED的研究进展,并对其未来在大功率照明市场的应用进行了展望。

关 键 词:图形化蓝宝石衬底  氮化镓(GaN)  LED  刻蚀

Research Progress of LED-based on Patterned Sapphire Substrate
ZHANG Qinliang,PING Zhihan. Research Progress of LED-based on Patterned Sapphire Substrate[J]. Equipment for Electronic Products Marufacturing, 2012, 41(12): 10-16
Authors:ZHANG Qinliang  PING Zhihan
Affiliation:,SU Jinghong,WANG Mo,JIN Zhijie (TDG Machinery Technology Co.,Ltd,Haining Zhejiang 314400,China)
Abstract:Patterned substrate sapphire has attracted much interest in recent years due to its outstanding properties in improve GaN epitaxial crystal quality and light output powers of the LEDs.The research progress of LED-based on patterned sapphire substrate is reviewed from the fabrication methods and pattern-size.And the prospects for future development of patterned sapphire substrates are proposed.
Keywords:Patterned sapphire substrate  GaN  LED  Etch
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