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插层Bi对NiFe/FeMn双层膜交换偏置场的影响及其XPS分析
引用本文:李明华,于广华,朱逢吾,曾德长,赖武彦.插层Bi对NiFe/FeMn双层膜交换偏置场的影响及其XPS分析[J].功能材料,2005,36(12):1834-1836.
作者姓名:李明华  于广华  朱逢吾  曾德长  赖武彦
作者单位:华南理工大学,机械学院,广东,广州,510640;北京科技大学,材料物理系,北京,100083;北京科技大学,材料物理系,北京,100083;华南理工大学,机械学院,广东,广州,510640;中国科学院物理研究所,北京,100080
基金项目:国家自然科学基金资助项目(50471093,50271007)
摘    要:在Ta/Cu/NiFe/FeMn/Ta薄膜中,我们曾发现Cu在NiFe层的表面偏聚导致NiFe/FeMn薄膜的交换偏置场降低。为了抑制Cu的表面偏聚,我们在Ta/Cu/NiFe/FeMn/Ta薄膜中在Cu/NiFe界面沉积Bi插层。实验发现,沉积适当厚度的Bi插层可以将NiFe/FeMn双层膜的交换偏置场提高1倍。XPS分析表明,在Cu/NiFe界面沉积的插层Bi有效地抑制了Cu在NiFe表面的偏聚,提高了交换偏置场。

关 键 词:NiFe/FeMn  交换偏置场Hex  表面偏聚  Bi插层
文章编号:1001-9731(2005)12-1834-03
收稿时间:2005-04-07
修稿时间:2005-07-30

The influence of Bi on the exchange bias field of NiFe/FeMn bilayers and the XPS analysis
LI Ming-hua,YU Guang-hua,ZHU Feng-wu,ZENG De-chang,LAI Wu-yan.The influence of Bi on the exchange bias field of NiFe/FeMn bilayers and the XPS analysis[J].Journal of Functional Materials,2005,36(12):1834-1836.
Authors:LI Ming-hua  YU Guang-hua  ZHU Feng-wu  ZENG De-chang  LAI Wu-yan
Affiliation:1. College of Mechanical Engineering, South China University of Technology, Guangzhou 510640, China; 2. Department of Materials Physics, University of Science and Technology Beijing, Beijing 100083, China;3. Institute of Physics, Chinese Academy of Sciences, Beiiing 100080, China
Abstract:Experimental results show that Cu atoms can segregate to the NiFe surface in Ta/Cu/NiFe/FeMn/Ta films.This segregation results in a decrease of the exchange bias field(Hex) of NiFe/FeMn.In order to suppress the Cu surface segregation,we deposited Bi insetting layers at the interface of Cu and NiFe in Ta/Cu/NiFe/FeMn/Ta films.We found that the Hex of NiFe/FeMn can be doubled when the proper Bi was deposited.XPS analysis shows that Bi insetting layers deposited at the interface of Cu/NiFe effectively suppress the Cu segregation on the NiFe surface.As a result,the Hex was increased.
Keywords:NiFe/FeMn  exchange coupling field(Hex)  surface segregation  Bi insetting layer
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