Spin transport in epitaxial Fe3O4/GaAs lateral structured devices |
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| Affiliation: | 1.School of Physics, Southeast University, Nanjing 211189, China;2.Spintronics and Nanodevice Laboratory, Department of Electronics, University of York, York YO105 DD, United Kingdom;3.York-Nanjing Joint Center in Spintronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China;4.Department of Electronic Engineering, Royal Holloway University of London, Egham, Surrey TW200 EX, United Kingdom |
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| Abstract: | Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias dependence. Understanding the spin-dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFETs. |
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| Keywords: | spin field-effect transistor spin injection and detection half metal magnetoresistance |
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