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β-Ga2O3 Junctionless FET with an Ω Shape 4H-SiC Region in Accumulation Mode |
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| Authors: | Madadi Dariush |
| Affiliation: | 1.Faculty of Electrical and Computer Engineering, Semnan University, Semnan, Iran ; |
| Abstract: | Silicon - In this paper, we present a solution for understanding volume depletion and essentially decreasing the leakage current of β-Ga2O3 junctionless FETs (βJL-FETs) by embedding the... |
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